Samsung Electronics is developing an 8-layer HBM4E memory st
文 / 小金
2026-08-31 13:30:02
来源:亚金网
Samsung Electronics is developing an 8-layer HBM4E memory stack for NVIDIA (NVDA.O), reducing planned stack height from 12–16 layers. NVIDIA’s speed target is 17–18Gbps, roughly 20% above Samsung’s early 14.4Gbps HBM4E samples. The modules are reported to be destined for NVIDIA’s NVHBM products.
